Samsung already developing DDR6 memory, could be overclocked to 17000 MT/s
ComputerBase shares information from Samsung Tech Day 2021, where the South Korean company revealed its future roadmaps and innovations in regard to memory technology.
First and foremost, there are no slides or photos from the event, because Samsung’s terms and conditions do not allow any to be taken. The good news is that ComputerBase has a good overview of what was said by Samsung executives and engineering teams so we can jump right into the data itself.
DDR6-12800, overclocked up to 17000 Mbit/s
The DDR5 memory has just entered the mainstream market alongside the Intel 12th Gen Core ‘Alder Lake-S’ series this month, but it is not until 2023 that consumers should expect fair pricing on this new memory technology. The transition will most definitely take a long time, possibly around 2 years, MSI’s own research predicts.
Meanwhile, Samsung is ready to talk about a successor to DDR5 technology, which is said to offer double the speed and bandwidth. The DDR6 standard has not yet been formalized by JEDEC, however, the specifications should be around 12800 Mbit/s by default. Samsung confirms that the technology is in the early development phase thus numbers shared by the company are likely to change, but ComputerBase reports that overclocked DDR6 memory up to 17000 Mbit/s is to be expected.
It is said that DDR6 will feature four channels per module (doubled compared to DDR5), and the number of memory banks will increase to 64, quadrupling over the DDR4 standard.
GDDR6+ and GDDR7 with a real-time error-protection feature, HBM3 in Q2 2022
Some information on post GDDR6 standards has also been revealed by Samsung. Apparently, the company is now developing a GDDR6+ standard offering speeds as high as 24 Gbps. This is higher than 18 Gbps to be offered with the current GDDR6 standard, which will soon be manufactured using Samsung’s 1z nm process.
Furthermore, a GDDR7 standard is also on a roadmap but supposedly does not have any date attached to it. This technology is to increase memory bandwidth to 32 Gbps and feature ‘real-time error protection feature’, however here Samsung was not ready to provide further details.
ComputerBase also reports that Samsung is to begin mass production of HBM3 (High-Bandwidth-Memory Gen3) in the second quarter of 2022.